A Si memory device composed of a one-dimensional metal-oxide-semiconductor field-effect-transistor switch and a single-electron-transistor detector

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2457-2461

  Takahashi, Yasuo ^a   Fujiwara, Akira ^a   Yamazaki, Kenji ^a   Namatsu, Hideo ^a   Kurihara, Kenji ^a   Murase, Katsumi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Coulomb blockade; Memory; MOSFET; One dimensional wire; Single electron; Subthreshold slope

Indexed keywords

EID: 0000532243     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2457     Document Type: Article

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