Influence of quantum confinement effects on single electron and single hole transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 119-122

  Ishikuro, Hiroki ^a   Hiramoto, Toshiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; HOLE TRAPS; NANOSTRUCTURED MATERIALS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM CONFINEMENT EFFECTS; SINGLE ELECTRON TRANSISTORS; SINGLE HOLE TRANSISTORS;

MOSFET DEVICES;

EID: 0032271789     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)