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IEICE Transactions on Electronics

Volumn E79-C, Issue 11, 1996, Pages 1586-1589

Coulomb blockade effects in edge quantum wire SOI-MOSFETs

(2) Ohata, Akiko a Toriumi, Akira a

a TOSHIBA CORPORATION (Japan)

Author keywords

Coulomb blockade; Edge quantum wire; Si MOSFET; Single electron tunneling

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRON TUNNELING; OSCILLATIONS; OXIDATION; QUANTUM THEORY; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS; VOLTAGE CONTROL;

COULOMB BLOCKADE EFFECTS; EDGE QUANTUM WIRE; FILM THICKNESS; SINGLE ELECTRON TUNNELING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030284113 PISSN: 09168524 EISSN: None Source Type: Journal
DOI: 10.7567/ssdm.1996.sympo.iii-9 Document Type: Article

Times cited : (11)

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