Technology for nanoperiodic doping of a metal-oxide-semiconductor field-effect transistor channel using a self-forming wave-ordered structure

Nanotechnology

Volumn 14, Issue 7, 2003, Pages 709-715

  Smirnov, V K ^a   Kibalov, D S ^a   Orlov, O M ^b   Graboshnikov, V V ^c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b JSC Korona Semiconductor   (Russian Federation)

^c Agency Mktg Scientific Prod Ltd   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ARSENIC; ION BOMBARDMENT; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NITROGEN; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SURFACES;

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR CHANNEL; NANOMASK; NANOPERIODIC DOPING; PERIODICALLY DOPED CHANNEL FIELD EFFECT TRANSISTOR; SELF FORMING NANOSTRUCTURE; WAVE ORDERED STRUCTURE;

NANOTECHNOLOGY;

EID: 0041995354     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/7/304     Document Type: Article

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