Wave-ordered structures formed on SOI wafers by reactive ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 310-315

  Smirnov, V K ^a   Kibalov, D S ^a   Krivelevich, S A ^a   Lepshin, P A ^a   Potapov, E V ^a   Yankov, R A ^b   Skorupa, W ^b   Makarov, V V ^c   Danilin, A B ^c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c Cent for Analysis of Substances   (Russian Federation)

Author keywords

Bombardment; Nanostructures; Nitrogen; Silicon; Surface topography

Indexed keywords

ION BEAMS; NANOSTRUCTURED MATERIALS; NITROGEN; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE TOPOGRAPHY;

REACTIVE ION BEAMS; WAVE ORDERED STRUCTURES;

ION BOMBARDMENT;

EID: 0032738918     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00610-7     Document Type: Article

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