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Volumn 419, Issue 2-3, 1999, Pages 249-264

Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions I. Oxygen bombardment of silicon

(1) Wittmaack, K a

a INSTITUTE OF EPIDEMIOLOGY (Germany)

Author keywords

Electron emission; Insulating surfaces; Ion implantation; Ion solid interaction; Oxidation; Silicon; Silicon oxides

Indexed keywords

ELECTRON EMISSION; ION IMPLANTATION; OXIDATION; OXYGEN; SEMICONDUCTING SILICON; SURFACES;

ION INDUCED ELECTRON EMISSION; ION SOLID INTERACTION;

ION BOMBARDMENT;

EID: 0033521394 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00803-6 Document Type: Article

Times cited : (57)

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