Optimization of the channel doping profile of vertical sub-100 nm MOSFETs

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 309-312

  Kaesen, F ^a   Fink, C ^b   Anil, K G ^b   Hansch, W ^c   Doll, T ^b   Grabolla, T ^d   Schreiber, H ^e   Eisele, I ^b  

^a SIEMENS AG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c HIROSHIMA UNIVERSITY   (Japan)

^d RUHR UNIVERSITY BOCHUM   (Germany)

^e IHP   (Germany)

Author keywords

Modulation doped field effect transistors; Molecular beam epitaxy

Indexed keywords

DRY ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

MODULATION-DOPED FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0032313039     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01315-7     Document Type: Article

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