Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4449, Issue , 2001, Pages 58-68

  Schubert, Mathias ^a   Kasic, Alexander ^a   Figge, Stephan ^b   Diesselberg, Marc ^b   Einfeldt, Sven ^b   Hommel, Detlef ^b   Köhler, Ulrich ^c   Josef As, Donat ^c   Off, Jürgen ^d   Kuhn, Bertram ^d   Scholz, Ferdinand ^d   Woollam, John A ^e   Herzinger, Craig M ^f  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c UNIVERSITY OF PADERBORN   (Germany)

^d UNIVERSITY OF STUTTGART   (Germany)

^e UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^f J A WOOLLAM CO INC   (United States)

Author keywords

AlGaN; AlInN; Anisotropy; Dielectric function; Ellipsometry; Free carrier absorption; GaN; Infrared; InGaN; Laser diode; Light emitting diode; Phonon modes

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELLIPSOMETRY; INFRARED SPECTROSCOPY; NONDESTRUCTIVE EXAMINATION; PERMITTIVITY; PHONONS; STRAIN; THICKNESS MEASUREMENT;

CRYSTAL QUALITY; FREE CARRIER PLASMONS; INFRARED SPECTROSCOPIC ELLIPSOMETRY;

HETEROJUNCTIONS;

EID: 0041783416     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.450109     Document Type: Article

References (32)

1. J. W. Orton, and C. T. Foxon, "Group III nitride semiconductors for short-wavelength light emitting devices", Rep. Prog. Phys. 61, 1 - 75, 1998.
2. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, "III-nitrides: Growth, characterization, and properties", J. Appl. Phys. 87, 965 - 1006, 2000.
3. U. Mishra, and M.S. Shur, C.M. Wetzel, B. Gil, and K. Kishino (Editors), "GaN and Related Alloys 2000", MRS Proc. Vol. 639, 2001.
4. D. E. Aspnes, in: Handbook of Optical Constants of Solids, Academic, New York, 1998.
5. E. Jr. Jellison, "Spectroscopic ellipsometry data analysis: Measured versus calculated quantities", Thin Solid Films 313-314, pp. 33 - 39, 1998.
6. J. A. Woollam, B. Johs, C. M. Herzinger, J. Hilfiker, R. Synowicky, C. L. Bungay, "Overview of variable spectroscopic ellipsometry (VASE), part I: Basic theory and typical applications", SPIE CR72, pp. 3 - 28, 1999.
7. B. Johs, J. A. Woollam, C. M. Herzinger, J. Hilfiker, R. Synowicky, C. L. Bungay, "Overview of variable spectroscopic ellipsometry (VASE), part II: Advanced applications", SPIE CR72, pp. 29 - 56, 1999.
8. A. Röseler, "Infrared Spectroscopic Ellipsometry", Akademie-Verlag, Berlin, 1992.
9. T. E. Tiwald, D. W. Thompson, J. A. Woollam, W. Paulson, and R. Hance, "Application of ir variable angle spectroscopic ellipsometry to the determination of free carrier concentration profiles", Thin Solid Films 313 - 314, pp. 661 - 666, 1998.
10. D.W. Thompson, M.J. De Vries, T.E. Tiwald, and J.A. Woollam, "Determination of optical anisotropy in calcite from ultraviolet to mid-infrared by generalized ellipsometry", Thin Solid Films 313-314, pp. 341 - 346, 1998.
11. 2 from 0.148 to 33 μm using generalized ellipsometry", SPIE 4103, pp. 19 - 29, 2000.
12. M. Schubert, "Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems", Phys. Rev. B 53, 4265 - 4274, 1996.
13. M. Schubert, J. A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn, and F. Scholz, "Phonon and free-carrier properties of group III-nitride heterostructures measured by infrared ellipsometry", MRS Internet J. Nitride Semicond. Res. 4, p. 11, 1999.
14. M. Schubert, A. Kasic, T. E. Tiwald, J. A. Woollam, V. Härle, and F. Scholz, "Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by Infrared Ellipsometry and Raman spectroscopy", ibid 5, W11.39, 2000.
15. A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, "Free-carrier and phonon properties of p- and n-type α-GaN films measured by infrared ellipsometry", Phys. Rev. B 62, pp. 7365 - 7377, 2000.
16. M. Schubert, T. E. Tiwald, and C. M. Herzinger, "Infrared dielectric anisotropy and phonon modes of sapphire", Phys. Rev. B 61, pp. 8187 - 8201, 2000.
17. T. E. Tiwald, J. A. Woollam, S. Zollner, J. Christiansen, R. B. Gregory, T. Wetteroth, S. R. Wilson, and A. R. Powell, "Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry", Phys. Rev. B 60, pp. 11464 - 11474, 1999.
18. 4", Phys. Rev. B 61, pp 14554 - 14563, 2000.
19. J. Humlíček, R. Henn, and M. Cardona, "Fair-infrared ellipsometry of depleted surface layer in heavily doped n-type GaAs", Appl. Phys. Lett. 69, 2581 - 2583, 1996.
20. S. Zangooie, M. Schubert, D. W. Thompson, and J. A. Woollam, "Infrared response of multiple component free-carrier plasma in heavily doped p-type GaAs", Appl. Phys. Lett. 78, 937 - 939, 2001.
21. A. Kasic, M. Schubert, B. Rheinländer, V. Riede, S. Einfeldt, D. Hommel, B. Kuhn, J. Off, F. Scholz, "Effective carrier mass and mobility versus carrier concentration in p- and n-type GaN determined by infrared ellipsometry and Hall resistivity measurements", Mat. Sci. & Eng. B 82, 74 - 76, 2001.
22. A. Kasic, M. Schubert, B. Kuhn, F. Scholz, S. Einfeld, and D. Hommel, "Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN", J. Appl. Phys. 89, pp. 3720 - 3734, 2001.
23. xN thin films", Appl. Phys. Lett. 78, pp. 1526 - 1258, 2001.
24. G. Leibiger, V. Gottschalch, B. Rheinländer, J. Sik, and M. Schubert, "Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultra violet wavelengths", J. Appl. Phys. 89, 4927 - 4938, 2001.
25. 0.48P", Phys. Rev. B 65, XXXX - XXXX, 2001 (September 15, 2001)
26. C. M. Wolfe, N. Holonyak and G. E. Stillmann, "Physical Properties of Semiconductors", Prentice Hall, New Jersey, 1989.
27. H. Grille, C. Schnittler, and F. Bechstedt, "Phonons in ternary group-III nitrides", Phys. Rev. B 61, pp. 6091 - 6105, 2000.
28. J. Sik, M. Schubert, G. Leibiger, V. Gottschalch, "Band-gap energies, optical constants, phonons and free carrier properties in GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry", J. Appl. Phys. 89, 294 - 305, 2001.
29. S. Figge, T. Böttcher, S. Einfeldt, and D. Hommel, "In-situ and ex-situ evaluation of the film coalescence for GaN growth on GaN nucleation layers", J. Cryst. Growth. 221, 262 - 266, 2000.
30. xAs mixed crystals", J. Appl. Phys. 50, 4362 - 4370, 1979.
31. xSb", Phys. Rev. B 2, 3303 - 3311, 1970.
32. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, "Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire", J. Appl. Phys. 87, pp. 3375 - 3380, 2000.