Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs

Applied Physics Letters

Volumn 78, Issue 7, 2001, Pages 937-939

  Zangooie, S ^a   Schubert, M ^a,b   Thompson, D W ^a   Woollam, J A ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001344910     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1343490     Document Type: Article

References (14)

1. T. E. Tiwald, J. A. Woollam, S. Zollner, J. Christiansen, R. B. Gregory, T. Wetteroth, S. R. Wilson, and A. P. Powell, Phys. Rev. B 60, 11464 (1999).
2. H. Nakano, T. Sakamoto, and K. Taniguchi, J. Appl. Phys. 83, 1384 (1998).
3. S. Adachi, GaAv and Related Materials: Bulk Semiconducting and Superlattice Properties (World Scientific, Singapore, 1994).
4. G. Irmer, M. Wenzel, and J. Monecke, Phys. Rev. B 56, 9524 (1997).
5. J. Humliček, R. Henn, and M. Cardona, Appl. Phys. Lett. 69, 2581 (1996).
6. A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, Phys. Rev. B 62, 7365 (2000).
7. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, New York, 1987).
8. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 1996).
9. C. M. Wolfe, N. Holonyak, Jr., and G. E. Stillman, Physical Properties of Semiconductors (Prentice-Hall, Englewood Cliffs, NJ, 1989).
10. A. A. Kukharskii, Solid State Commun. 13, 1761 (1973).
11. D. W. Berreman, Phys. Rev. 130, 2193 (1963).
12. S. Zollner, J. P. Carrejo, T. E. Tiwald, and J. A. Woollam, Phys. Status Solidi A 208, R3 (1998).
13. J. R. Lowney and A. H. Kahn, J. Appl. Phys. 64, 447 (1988).
14. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).