Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 74-76

  Kasic, A ^a,b   Schubert, M ^a,b   Rheinlander B ^a   Riede, V ^a   Einfeldt, S ^c   Hommel, D ^c   Kuhn, B ^d   Off, J ^d   Scholz, F ^d  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF BREMEN   (Germany)

^d UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Effective mass; Ellipsometry; GaN; Infrared; Optical properties

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; ELLIPSOMETRY; HALL EFFECT; HOLE TRAPS; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

FREE-CARRIER PARAMETERS; HALL RESISTIVITY; INFRARED SPECTROSCOPIC ELLIPSOMETRY (IRSE);

SEMICONDUCTING FILMS;

EID: 0035933135     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00753-4     Document Type: Article

References (8)