Far-infrared ellipsometry of depleted surface layer in heavily doped n-type GaAs

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2581-2583

  Humlicek J ^a   Henn, R ^b   Cardona, M ^b  

^a MASARYK UNIVERSITY   (Czech Republic)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001478070     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117706     Document Type: Article

References (10)

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5. J. Humlíček, Ferroelectrics 176, 221 (1996).
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