The effect of Co incorporation on electrical characteristics of n+/p shallow junction formed by dopant implantation into CoSi2 and anneal

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 994-998

  Park, Ji Soo ^a   Sohn, Dong Kyun ^a,b   Bae, Jong Uk ^a   Han, Chang Hee ^a   Park, Jin Won ^a  

^a Hyundai MicroElectron Co Ltd   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Co traps; Generation current; Poole frenkel barrier lowering; Suicided junction

Indexed keywords

EID: 0000221148     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841231     Document Type: Article

References (19)

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