Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1859-1862

  Gillespie, J K ^a   Fitch, R C ^a   Moser, N ^a   Jenkins, T ^a   Sewell, J ^a   Via, D ^a   Crespo, A ^a   Dabiran, A M ^b   Chow, P P ^b   Osinsky, A ^b   Mastro, M A ^c   Tsvetkov, D ^c   Soukhoveev, V ^c   Usikov, A ^c   Dmitriev, V ^c   Luo, B ^d   Pearton, S J ^d   Ren, F ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SVT ASSOCIATES   (United States)

^c TDI Inc   (United States)

^d University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

BUFFER LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0041591181     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00140-0     Document Type: Conference Paper

References (31)

1. Zolper J.C. Tech. Digest IEDM. 389:1999;16.1.1.
2. See for example, the papers in the special issue on GaN electronics Zolper J.C., Mishra U.K. IEEE Trans. Electron. Dev. ED48:2001;507.
3. Kemeley R.T., Wallace H.B., Yoder M.N. Proc. IEEE. 90:2002;1059.
4. Mishra U.K., Parikh P., Wu Y.-F. Proc. IEEE. 90:2002;1022.
5. Trew R.J. Proc. IEEE. 90:2002;1032.
6. Pearton S.J., Ren F., Zhang A.P., Lee K.P. Mater. Sci. Eng. R. 30:2000;55.
7. Johnson J.W., Ren F., Pearton S.J., Baca A.G., Han J., Dabiran A.M.et al. J. Nanosci. Nanotechnol. 2:2002;325.
8. Binari S.C., Ikossi K., Roussos J.A., Kruppa W., Park D., Dietrich H.B.et al. IEEE Trans. Electron. Dev. 48:2001;465.
9. Luo B., Johnson J.W., Kim J., Mehandru R.M., Ren F., Gila B.P.et al. Appl. Phys. Lett. 80:2002;1661.
10. Gillespie J., Fitch R.C., Sewell J., Dettmer R., Via G., Crespo A.et al. IEEE Trans. Electron. Dev. 23:2002;505.
11. Luo B., Mehandru R., Kim J., Ren F., Gila B.P., Onstine A.H.et al. J. Electrochem. Soc. 149:2002;G613.
12. Van Hove J.M., Cosimini G.J., Nelson E., Wowchack A.M., Chow P.P. J. Cryst. Growth. 150:1995;908.
13. Maruska H.P., Tietzen J.J. Appl. Phys. Lett. 15:1969;367.
14. Molnar R.J. Pankove J.I., Moustakas T.D. GaN-II. 1999;Academic Press, NY.
15. Vaudo R.P., Phanse V.M. Electrochem. Soc. Proc. 19-18:1998;79.
16. Doppalapudi D., Moustakas T.D. Nalwa H.S. Handbook of thin films. vol. 4:2002;Academic Press, NY.
17. Molnar R., Goetz W., Romano L.T., Johnson N.M. J. Cryst. Growth. 178:1996;147.
18. Detchprohm T., Hiramatsu K., Amano H., Akasaki I. Appl. Phys. Lett. 61:1992;2688.
19. Gibart P, Beaumont B. In: Osinski M, editor. GaN-based Technologies. SPIE Optical Engineering Series. Washington, 2002.
20. Morkoc H. Mater. Sci. Eng. R. 33:2001;135.
21. Kelly M.K., Vaudo R.P., Phanse V.M., Gorgens L., Ambacher O., Stutzmana M. Jpn. J. Appl. Phys. 38:1999;L217.
22. Park S.S., Park I.-W., Chok S.H. Jpn. J. Appl. Phys. 39:2000;L1141.
23. Lee K., Auh K. Jpn. J. Appl. Phys. 40:2001;L13.
24. Kim S.T., Lee Y.J., Moon D.C., Hong C., Soo T.K. Semicond. Sci. Technol. 14:1999;278.
25. Melnik Y.V., Vassilevski K.V., Nikitina I.P., Babanin A.I., Davydov Y., Dmitriev V.A. MRS Technol. J. Nitride Semicond. Res. 2:1997;39.
26. Wakahara A., Yamamoto T., Ishio K., Yoshida A., Seki Y., Kainosho K.et al. Jpn. J. Appl. Phys. 39:2000;2399.
27. Kryliouk O., Reed M., Dann T., Anderson T.J. Mater. Sci. Eng. B. 66:1999;26.
28. Motoki K. Jpn. J. Appl. Phys. 40:2001;L140.
29. Nagahama S., Iwasa N., Senoh M., Matsushita T., Sugimoto Y., Kikoyu H.et al. Jpn. J. Appl. Phys. 39:2000;L647.
30. Tsvetkov D., Melnik Yu., Davydov A., Shapiro A., Kovalenkov O., Lam J.B.et al. Phys. Stat. Sol. 188-1:2001;429.
31. Mastro M.S., Tsvetkov D., Soukhoveev V., Usikov A., Dmitriev V., Luo B.et al. Solid-State Electron. 47:2003;1075.