Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 415-418

  Manzini, S ^a   Gallerano, A ^a   Contiero, C ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); POWER ELECTRONICS; SUBSTRATES;

DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (DMOS) TRANSISTORS; HOT ELECTRON INJECTION; HOT ELECTRON TRAPPING;

MOSFET DEVICES;

EID: 0031639116     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)