New degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation

Microelectronics Reliability

Volumn 41, Issue 3, 2001, Pages 437-443

  Dreesen, R ^a   Croes, K ^a   Manca, J ^a   De Ceuninck, W ^a   De Schepper, L ^a   Pergoot, A ^b   Groeseneken, G ^c  

^a HASSELT UNIVERSITY   (Belgium)

^b LUCENT TECHNOLOGIES   (United States)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURVE FITTING; DEGRADATION; ELECTRIC RESISTANCE MEASUREMENT; EXTRAPOLATION; HOT CARRIERS; LEAST SQUARES APPROXIMATIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

LIFETIME EXTRAPOLATION METHOD; SERIES RESISTANCES;

MOSFET DEVICES;

EID: 0035278429     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00225-0     Document Type: Article

References (13)

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