Experimental study of hot-carrier effects in LDMOS transistors

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1228-1233

  Versari, Roberto ^a   Pieracci, Augusto ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRODES; GATES (TRANSISTOR); ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

DEGRADATION MECHANISMS; DEVICE OPTIMIZATION; LATERAL DOUBLE DIFFUSED MOS TRANSISTORS;

HOT CARRIERS;

EID: 0032665190     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766890     Document Type: Article

References (20)