0.6 μm BiCMOS based 15 and 25V LDMOS for analog applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 169-172

  Kawaguchi, Y ^a   Nakamura, K ^a   Karouji, K ^a   Watanabe, K ^a   Yamaguchi, Y ^a   Nakagawa, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR);

ADAPTIVE RESURF;

MOSFET DEVICES;

EID: 0034826465     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)