A new characterization method for hot-carrier degradation in DMOS transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1855-1858

  Pieracci, A ^a   Ricco B ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Capacitance measurements; Hot carriers; Ldmos device

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; OXIDES;

OXIDE CHARGE; STRESS INDUCED DAMAGE;

MOSFET DEVICES;

EID: 0032138065     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704394     Document Type: Article

References (8)

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