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Volumn , Issue , 1998, Pages 61-64
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33 V, 0.25 mΩ-cm2 n-channel LDMOS in a 0.65 μm smart power technology for 20-30 V applications
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Author keywords
[No Author keywords available]
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
ELECTRIC POTENTIAL;
ELECTRIC RESISTANCE;
GATES (TRANSISTOR);
POWER ELECTRONICS;
SMART POWER TECHNOLOGY;
MOS DEVICES;
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EID: 0031634388
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (28)
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References (4)
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