Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H-SiC

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1397-1400

  Xu, J P ^a   Lai, P T ^b   Chan, C L ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Interface properties; MOS devices; N2O nitridation; Silicon carbide; SiO2

Indexed keywords

DIFFUSION; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; SILICON CARBIDE;

STEAM-INDUCED INTERFACES;

SILICA;

EID: 0038515386     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00012-1     Document Type: Article

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