Influence of the post-oxidation process on the MOS interface and MOSFETs properties

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 643-646

  Suzuki, S ^a   Cho, W J ^a   Kosugi, R ^a   Senzaki, J ^a   Harada, S ^a   Fukuda, K ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ENERGY GAP; INTERFACES (MATERIALS); MOS CAPACITORS; MOSFET DEVICES; OXIDATION; OXIDES; THRESHOLD VOLTAGE;

CAPACITANCE VOLTAGE MEASUREMENTS; CHANNEL MOBILITY; GATE OXIDE; HEXAGONAL TYPE SILICON CARBIDE; INTERFACE STATE DENSITY; POST OXIDATION PROCESS;

SILICON CARBIDE;

EID: 4244193338     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.643     Document Type: Article

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