Optical characterization of thermally oxidized Si1-x-yGexCy layers

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 233-238

  Cuadras, A ^a   Garrido, B ^a   Bonafos, C ^a   Morante, J R ^a   Fonseca, L ^b   Franz, M ^c   Pressel, K ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTROLUMINESCENCE; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; REACTION KINETICS; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

SILICON GERMANIUM CARBIDE;

SEMICONDUCTING FILMS;

EID: 0033907712     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00932-3     Document Type: Article

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