Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2002, Pages 135-140

  Koh, B H ^a   Ng, T H ^a   Zheng, J X ^a   Chim, W K ^a   Choi, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Metal insulator semiconductor (MIS); Quantum mechanical (QM) modeling; Zirconium dioxide

Indexed keywords

ALUMINUM-GATE; CAPACITANCE-VOLTAGE CHARACTERISTICS; COMPLEX EIGENVALUES; ELECTRICAL THICKNESS; EQUIVALENT OXIDE THICKNESS; EXPERIMENTAL MEASUREMENTS; GATE CURRENT; GATE CURRENT DENSITY; GATE INSULATOR LAYERS; GATE TUNNELING CURRENTS; INTERFACE TRAP DENSITY; METAL GATE; METAL INSULATOR SILICONS; METAL-INSULATOR-SEMICONDUCTORS; MIS STRUCTURE; NUMERICAL CALCULATION; QUANTUM MECHANICAL; QUANTUM MECHANICAL SIMULATIONS; QUANTUM TRANSMITTING BOUNDARY METHODS; QUANTUM-MECHANICAL MODELING; QUASI-BOUND STATE; SILICATE LAYERS; SILICON SURFACES; STATIONARY WAVES; ZIRCONIUM DIOXIDE;

CAPACITANCE; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON TUNNELING; GATE DIELECTRICS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SILICATES;

ZIRCONIUM;

EID: 84861088569     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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