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Volumn 46, Issue 6 PART 1, 1999, Pages 1562-1567

The effect of near-interface network strain on proton trapping in SiO2

Author keywords

[No Author keywords available]

Indexed keywords

NETWORK STRAIN; PROTON TRAP;

EID: 0033328605     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819121     Document Type: Article
Times cited : (21)

References (14)
  • 1
    • 20344388361 scopus 로고    scopus 로고
    • Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
    • 266 (1967).
    • B.E. Deal, M, Sklar, A.S. Grove, and E.H. Snow, Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon, J. Electrochem. Soc. 114, 266 (1967).
    • J. Electrochem. Soc. 114
    • Deal, B.E.1    Sklar, M.2    Grove, A.S.3    Snow, E.H.4
  • 2
    • 21544467967 scopus 로고    scopus 로고
    • Trap Creation in Silicon Dioxide Produced by Hot-Electrons
    • Phys. 65, 2342(1989).
    • D.J. DiMaria and J.W. Stasiak, Trap Creation in Silicon Dioxide Produced by Hot-Electrons, J. Appl, Phys. 65, 2342(1989).
    • J. Appl
    • Dimaria, D.J.1    Stasiak, J.W.2
  • 3
    • 0026895961 scopus 로고    scopus 로고
    • Hydrogen Model for Radiation-Induced Interface States in SiOj-on-Si Structures : A Review of the Evidence
    • 762 (1992).
    • D.L. Griscom, Hydrogen Model for Radiation-Induced Interface States in SiOj-on-Si Structures : a Review of the Evidence, J. Electron. Mater. 21, 762 (1992).
    • J. Electron. Mater. 21
    • Griscom, D.L.1
  • 12
    • 84933548734 scopus 로고    scopus 로고
    • Structural ordering related to chemical bonds in random networks
    • 217 (1981).
    • A.G. Revesz, S.H. Wetnple, and Q.V. Gibbs, Structural ordering related to chemical bonds in random networks, Journal de physique 42, 217 (1981).
    • Journal de Physique 42
    • Revesz, A.G.1    Wetnple, S.H.2    Gibbs, Q.V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.