On the interface states generated under different stress conditions

Applied Physics Letters

Volumn 79, Issue 19, 2001, Pages 3092-3094

  Zhang, W D ^a   Zhang, J F ^a   Uren, M J ^b   Groeseneken, G ^c   Degraeve, R ^c   Lalor, M ^a   Burton, D ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009047152     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1416168     Document Type: Article

References (25)

1. G. Groeseneken, R. Bellens, G. Van den bosch, and H. E. Maes, Semicond. Sci. Technol. 10, 1208 (1995).
2. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
3. C. R. Helms and E. H. Poindexter, Rep. Prog. Phys. 57, 791 (1994).
4. 2 Interface-3, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms, (Pennington, NJ, 1996), pp. 214-249.
5. T. D. Mishima and P. M. Lenahan, IEEE Trans. Nucl. Sci. 47, 2249 (2000).
6. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett. 49, 348 (1986).
7. R. E. Stahlbush, A. H. Edwards, D. L. Griscom, and B. J. Mrstik, J. Appl. Phys. 73, 658 (1993).
8. 2 Interface-3, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms, (Pennington, NJ, 1996), pp. 525-537.
9. T. P. Ma, Semicond. Sci. Technol. 4, 1061 (1989).
10. A. Balasinski and T. P. Ma, Appl. Phys. Lett. 62, 3170 (1993).
11. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, IEEE Trans. Electron Devices 31, 42 (1984).
12. N. S. Saks, R. B. Klein, and D. L. Griscom, IEEE Trans. Nucl. Sci. 35, 1234 (1988).
13. D. J. DiMaria, J. Appl. Phys. 68, 5234 (1990).
14. J. F. Zhang, H. K. Su, R. Degraeve, and G. Groeseneken, J. Appl. Phys. 87, 2967 (2000).
15. J. F. Zhang, H. K. Su, G. Groeseneken, and R. Degraeve, IEEE Trans. Electron Devices 47, 378 (2000).
16. J. H. Stathis and D. J. DiMaria, Appl. Phys. Lett. 61, 2887 (1992).
17. R. C. Hughes, Solid-State Electron. 21, 251 (1978).
18. E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981).
19. Y. Y. Kim and P. M. Lenahan, J. Appl. Phys. 64, 3551 (1988).
20. R. L. Vranch, B. Henderson, and M. Pepper, Appl. Phys. Lett. 52, 1161 (1998).
21. Y. Roh and L. Trombetta, Microelectron. Eng. 28, 23 (1995).
22. D. J. DiMaria, D. A. Buchanan, J. H. Stathis, and R. E. Stahlbush, J. Appl. Phys. 77, 2032 (1995).
23. A. Stesmans, Phys. Rev. B 61, 8393 (2000).
24. B. J. O'Sullivan, P. K. Hurley, C. Leveugle, and J. H. Das, J. Appl. Phys. 89, 3811 (2001).
25. B. M. Dugan, Ph.D. thesis, Yale University, 1997.