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Volumn 71, Issue 20, 1997, Pages 3004-3006

Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

(3) Cole, M W a Ren, F b Pearton, S J c

a U S ARMY RESEARCH LABORATORY (United States)

b NOKIA RESEARCH CENTER (United States)

c University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000292713 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120244 Document Type: Article

Times cited : (37)

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