A 0.2-μm 180-GHz-f max 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 271-278

  Washio, Katsuyoshi ^a,b   Ohue, Eiji ^b   Shimamoto, Hiromi ^b   Oda, Katsuya ^b   Hayami, Reiko ^b   Kiyota, Yukihiro ^b   Tanabe, Masamichi ^b   Kondo, Masao ^a,b   Hashimoto, Takashi ^a,b   Harada, Takashi ^a,b  

^a IEEE   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

BiCMOS integrated circuits; Bipolar transistors; Emitter coupled logic; Epitaxial growth; Heterojunctions; High speed integrated circuits; MMICs

Indexed keywords

DEEP TRENCH ISOLATIONS; GATE DELAY; HIGH RESISTIVITY SUBSTRATES; HIGH SPEED INTEGRATED CIRCUITS; INTERFACE CIRCUIT; PASSIVE ELEMENTS; SELECTIVE EPITAXIAL GROWTH; SHALLOW TRENCH ISOLATIONS; SUBTHRESHOLD SLOPES; TITANIUM SALICIDE ELECTRODES;

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; EMITTER COUPLED LOGIC CIRCUITS; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036475861     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.981217     Document Type: Article

References (8)

1. BiCMOS6G: A high performance 0.35-μm SiGe BiCMOS technology for wireless applications
2. Modular integration of high-performance SiGe: C HBTs in a deep submicron, epi-free CMOS process
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4. A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications
5. max HBT and integrated high-Q RF passive components
6. A 0.2-μm bipolar-CMOS technology on bonded SOI with copper metallization for ultra-high-speed processors
7. max and 6.7-ps ECL
8. 82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs