Fabrication of Ge nanocrystals in SiO2 films by ion implantation: Control of size and position

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 2, 2002, Pages 1079-1083

  Masuda, Kaori ^a   Yamamoto, Masahiro ^b   Kanaya, Masatoshi ^b   Kanemitsu, Yoshihiko ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ION IMPLANTATION; KINETIC ENERGY; POSITIVE IONS; SEMICONDUCTING GERMANIUM; SILICA; SPUTTERING; THIN FILMS;

CO-SPUTTERING TECHNIQUES;

NANOSTRUCTURED MATERIALS;

EID: 0036530821     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01075-4     Document Type: Article

References (17)