Hydrogen-related reliability issues for advanced microelectronics

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1397-1403

  Fleetwood, D M ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); INTEGRATED CIRCUITS; MAGNETIC RESONANCE; MICROELECTRONICS; PARAMAGNETIC RESONANCE; PASSIVATION; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; WAFER BONDING;

DOPANT PASSIVATION; HYDROGEN CONCENTRATION; HYDROGEN RELATED DEFECTS; PERFORMANCE AND RELIABILITIES; PROCESSING CONDITION; SI-BASED MICROELECTRONICS; SILICON-ON- INSULATORS (SOI); STATISTICAL VARIATIONS;

HYDROGEN;

EID: 0037702678     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00158-0     Document Type: Conference Paper

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