Chemical and electronic structure of SiO 2 /Si interfacial transition layer

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 547-555

  Hattori, T ^a   Takahashi, K ^a   Seman, M B ^a   Nohira, H ^a   Hirose, K ^b   Kamakura, N ^c   Takata, Y ^c   Shin, S ^c,d   Kobayashi, K ^e  

^a TOKYO CITY UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c RIKEN   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Dielectric thin films; Disordered solid; Electronic structure; Interface structure; Photoelectron spectra; SiO 2 Si; XPS

Indexed keywords

BAND STRUCTURE; DIELECTRIC FILMS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); PHASE TRANSITIONS; PHOTOELECTRON SPECTROSCOPY; SILICON; SUBSTRATES; SYNCHROTRON RADIATION;

INTERFACE STRUCTURE;

SILICA;

EID: 0037565146     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00054-0     Document Type: Conference Paper

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