Energy barrier for valence electrons at SiO2/Si(111) interface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 A, 2002, Pages

  Takahashi, Kensuke ^a   Seman, Mustafa Bin ^a   Hirose, Kazuyuki ^b   Hattori, Takeo ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Electron energy loss spectroscopy; Silicon oxide; SiO2 Si interface; Tunneling; Valence band; Virtual electronic states; X ray photoelectron spectroscopy

Indexed keywords

BAND STRUCTURE; ELECTRIC EXCITATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ELECTRONS; ENERGY DISSIPATION; FIELD EFFECT SEMICONDUCTOR DEVICES; HIGH TEMPERATURE EFFECTS; HYDROGEN; INTERFACES (MATERIALS); OXIDATION; PARAMETER ESTIMATION; SILICA; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRONS;

SEMICONDUCTING SILICON;

EID: 0036508951     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l223     Document Type: Article

References (22)