Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1737-1741

  Brillson, L J ^a   Young, A P ^a   White, B D ^a   Schafer J ^a   Niimi, H ^b   Lee, Y M ^b   Lucovsky, G ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC FILMS; ELECTRIC INSULATING COATINGS; ELECTRON GAS; ELECTRON TRAPS; ENERGY GAP; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS;

LOW-ENERGY ELECTRON-EXCITED NANOLUMINESCENCE (LEEN) SPECTROSCOPY; PLASMA OXIDATION;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0034187087     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591463     Document Type: Article

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