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Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 401-403

Compositional and structural transition layer studied by the energy loss of O 1s photoelectrons

(3) Nohira, H a Takahashi, K a Hattori, T a

a TOKYO CITY UNIVERSITY (Japan)

Author keywords

Energy loss spectroscopy; O 1s photoelectron; Silicon oxide; Transition layer; X ray photoelectron spectroscopy

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; LIGHT SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOSITIONAL TRANSITION LAYERS; PHOTOELECTRONS; SILICON OXIDE;

ULTRATHIN FILMS;

EID: 0032628701 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01664-2 Document Type: Article

Times cited : (5)

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