RTS diagnostics of source-drain (edge?) related defects in submicron n-MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 368-371

  Lukyanchikova, N ^a   Petrichuk, M V ^a   Garbar, N ^a   Simoen, E ^b   Claeys, C ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS;

DRAIN CONTACTS; EXPERIMENTAL EVIDENCE; FIELD OXIDES; OXIDE DEFECTS; RANDOM TELEGRAPH SIGNALS; SOURCE-DRAIN; SYSTEMATIC STUDY; TRANSITION REGIONS;

MOSFET DEVICES;

EID: 84907528514     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194442     Document Type: Conference Paper

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