In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 212-218

  Deatcher, C J ^a   Liu, C ^a   Pereira, S ^a,b   Lada, M ^c   Cullis, A G ^c   Sun, Y J ^d   Brandt, O ^d   Watson, I M ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTOMETERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

IN SITU OPTICAL REFLECTOMETRY; INDIUM GALLIUM NITRIDE EPILAYERS; MULTI-QUANTUM WELL STRUCTURES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037395715     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/304     Document Type: Article

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