Modeling of InGaN MOVPE in AIX 200 reactor and AIX 2000 HT planetary reactor

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Talalaev, R A ^a   Yakovlev, E V ^b   Karpov, S Yu ^b   Makarov, Yu N ^c   Schoen, O ^d   Heuken, M ^d   Strauch, G ^d   Juergensen, Holger ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; ELECTRIC REACTORS; EPITAXIAL GROWTH; FLUID DYNAMICS; GALLIUM NITRIDE; HEAT TRANSFER; HETEROJUNCTIONS; SEMICONDUCTOR LASERS; THERMAL DIFFUSION;

EPITAXIAL LAYERS; INGAN; PLANETARY REACTORS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3442888380     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000612     Document Type: Article

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