In situ monitoring of GaN growth in multiwafer MOVPE reactors

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 727-731

  Lunenburger M ^a   Protzmann, H ^a   Heuken, M ^a   Jurgensen H ^a  

^a AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

GALLIUM NITRIDE; MULTIWAFER PLANETARY REACTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0342973208     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<727::AID-PSSA727>3.0.CO;2-6     Document Type: Article

References (6)

1. H. PROTZMANN, M. LÜNENBÜRGER, and M. HEUKEN, Proc. EW-MOVPE VIII, Prague, June 1999.
2. A. KROST, J. BLÄSING, M. LÜNENBÜRGER, H. PROTZMANN, and M. HEUKEN, to be published in Appl. Phys. Lett.
3. R. BECCARD, O. SCHÖN, B. SCHINELLER, D. SCHMITZ, M. HEUKEN, and H. JÜRGENSEN, Proc. MRS Fall Meeting, Boston (Mass., USA), Dec. 1 to 5, 1997.
4. D. SCHMITZ, R. BECCARD, O. SCHÖN, R. NIEBUHR, B. WACHTENDORF, and H. JÜRGENSEN, MRS Internet J. Nitride Semicond. Res. 2, art. 9, 33-41 (1997).
5. J. HAN, T.-B. NG, R.M. BIEFELD, M.H. CRAWFORD, and D.M. FOLLSTAEDT, Appl. Phys. Lett. 71, 3114 (1997).
6. P. VENNÉGUÈS, B. BEAUMONT, S. HAFFOUZ, M. VAILLE, and P. GIBART, J. Cryst. Growth 117, 167 (1998).