Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 4226-4231

  Kim, Han Su ^a   Xie, Ya Hong ^a   DeVincentis, Marc ^b   Itoh, Tatsuo ^b   Jenkins, Keith A ^c  

^a Engineering IV   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CROSSTALK; INSULATING MATERIALS; NATURAL FREQUENCIES; PERMITTIVITY; POROSITY; VLSI CIRCUITS;

SEMI-INSULATING MATERIALS;

POROUS SILICON;

EID: 0037391043     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555700     Document Type: Article

References (32)

1. K. B. Ashby, I. A. Koullias, W. C. Finley, J. J. Bastek, and S. Moinian, IEEE J. Solid-State Circuits 31, 4 (1996).
2. J. N. Burghartz, D. C. Edelstein, K. A. Jenkins, and Y. H. Kwark, IEEE Trans. Microwave Theory Tech. 45, 1961 (1996).
3. C. Liao, T.-H. Huang, C.-H. Lee, D. Tang, S.-M. Lan, T.-N. Yang, and L.-F. Lin, IEEE Electron Device Lett. 19, 461 (1998).
4. J. P. Raskin, A. Viviani, D. Flandre, and J.-P. Colinge, IEEE Trans. Electron Devices 44, 2252 (1997).
5. J.-B. Yoon, B.-K. Kim, C.-H. Han, E. Yoon, and C.-K. Kim, IEEE Electron Device Lett. 20, 487 (1999).
6. R. F. Drayton, R. M. Henderson, and L. P. B. Katehi, IEEE Trans. Microwave Theory Tech. 46, 900 (1998).
7. J. Kim, Y. Qian, G. Feng, P. Ma, M. F. Chang, and T. Itoh, IEEE Trans. Microwave Theory Tech. 48, 1482 (2000).
8. M. F. Chang, Y. Qian, P. Ma, and T. Itoh, Electron. Lett. 34, 1670 (1998).
9. C.-M. Nam and Y.-S. Kwon, IEEE Microwave Guid. Wave Lett. 7, 236 (1997).
10. R. J. Welty, S. H. Park, P. M. Asbeck, K.-P. S. Dancil, and M. J. Sailor, Proceedings on Silicon Monolithic Integrated Circuits in RF systems, 1998, p. 160.
11. Y. H. Xie, M. R. Frei, A. J. Becker, C. A. King, D. Kossives, L. T. Gomez, and S. K. Theiss, IEEE J. Solid-State Circuits 33, 1433 (1998).
12. L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, and J. M. Keen, J. Appl. Phys. 70, 422 (1991).
13. T. L. Lin and K. L. Wang, Appl. Phys. Lett. 49, 1104 (1986).
14. A. Halimaoui, Surf. Sci. Lett. 306, L550 (1994).
15. M. Krüger, R. A. -Fischer, M. Thönissen, H. Münder, M. G. Berger, H. Lüth, S. Hilbrich, and W. Theiss, Thin Solid Films 276, 257 (1996).
16. H. Wang, B. Welker, Y. Gao, J. F. Federici, and R. A. Levy, Mater. Lett. 23, 209 (1995).
17. D. M. Pozar, Microwave Engineering (Wiley, New York, 1998).
18. M. DeVincentis, H. S. Kim, Y. H. Xie, and T. Itoh, IEEE Microwave Guid. Wave Lett. (submitted).
19. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
20. G. Arlt, D. Hennings, and G. de With, J. Appl. Phys. 58, 1619 (1985).
21. C. L. Wang and S. R. P. Smith, J. Phys.: Condens. Matter 7, 7163 (1995).
22. S. Li, J. A. Eastman, R. E. Newnham, and L. E. Cross, Jpn. J. Appl. Phys., Part 1 35, L502 (1996).
23. L. T. Canham, Properties of Porous Silicon (INSPEC, London, 1997).
24. C. P. Yue and S. Simon Wong, IEEE J. Solid-State Circuits 33, 743 (1998).
25. J. N. Burghartz, Proceedings of First Topical Meeting on Silicon Monolithic Integrated Circuits in RF systems, 1998, p. 141.
26. P. I. L. Smeys, P. B. Griffin, and K. C. Saraswat, J. Appl. Phys. 78, 2837 (1995).
27. K. Barla, R. Herino, and G. Bomchil, J. Appl. Phys. 59, 439 (1986).
28. M. Ohring, The Materials Science of Thin Films (Academic, San Diego, CA, 1991).
29. T. Unagami, J. Electrochem. Soc. 144, 1835 (1997).
30. D. Buttard, G. Dolino, C. Faivre, A. Halimaoui, F. Comin, V. Formoso, and L. Ortega, J. Appl. Phys. 85, 7105 (1999).
31. H. S. Kim, E. C. Zouzounis, and Y. H. Xie, Appl. Phys. Lett. 80, 2287 (2002).
32. C. Faivre, D. Bellet, and G. Dolino, J. Appl. Phys. 87, 2131 (2000).