Silicon/metal/polyimide (SIMPOL) interconnects for broadband mixed signal silicon MMICs

Electronics Letters

Volumn 34, Issue 17, 1998, Pages 1670-1671

  Chang, M F ^a   Qian, Y ^a   Ma, P ^a   Itoh, T ^a  

^a Engineering IV   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CROSSTALK; FINITE DIFFERENCE METHOD; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; POLYIMIDES; SILICON WAFERS; TIME DOMAIN ANALYSIS;

SILICON/METAL/POLYIMIDE (SIMPOL) INTERCONNECTS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0032141179     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981155     Document Type: Article

References (4)

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2. BURGHRTZ, J.N., PLOUCHART, J.-O., JENKINS, K.A., WEBSTER, C.S., and SOYUER, M.: 'SiGe power HBT's for low-voltage, high performance RF applications', IEEE Electron Device Lett., 1998, 19, (4), pp. 103-105
3. SCHUPPEN, A., GERLACH, S., DIETRICH, H., WANDREI, D., SEILER, U., and KONIG, U.: 1-W SiGe power HBTs for mobile communication', IEEE Microw. Guided Wave Lett., 1996, 6, (9), pp. 341-343
4. MEYERSON, B.S., HARAME, D.L., STORK, J., CRABBE, E., COMFORT. J., and PATTON, G.: 'Silicon: germanium heterojunction bipolar transistors: from experiment to technology' in CHANG, M.F. (Ed.): 'Current trends ineterojunction bipolar transistors' (World Scientific, 1996), pp. 367-385