Formation of porous silicon on patterned substrates

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 257-260

  Kruger M ^a   Arens Fischer, R ^a   Thonissen M ^a   Munder H ^a   Berger, M G ^a   Luth H ^a   Hilbrich, S ^b   Theiss, W ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Electrochemistry; Etching; Silicon

Indexed keywords

ANISOTROPY; ANODIC OXIDATION; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTROCHEMISTRY; ETCHING; PHOTORESISTS; POROSITY; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SUBSTRATES;

SELECTIVE AREA ANODIZATION;

POROUS SILICON;

EID: 0030125195     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08066-X     Document Type: Article

References (6)

1. P. Steiner and W. Lang, Thin Solid Films, 255 (1995) 52-58.
2. W. Theiss, IR spectroscopy of porous silicon, in J.-C. Vial and J. Derrien (eds.), Porous Silicon Science And Technology, Springer Verlag, Berlin, 1995.
3. P. Grosse, L. Küpper and W. Theiss, SPIE Vol., 1575 (1991) 269.
4. M.G. Berger, St. Frohnhoff, W. Theiss, U. Rossow and H. Münder, Porous silicon: from single porous layers to porosity superlattices, in J.-C. Vial and J. Derrien (eds.), Porous Silicon Science And Technology, Springer Verlag, Berlin, 1995.
5. A.G. Nassiopoulos, S. Grigoropoulos, L. Canham, A. Halimaoui, I. Berbezier, E. Gogolides and D. Papadimitriou, Thin Solid Films, 255 (1995) 329-333.
6. I. De Wolf, H. Norström and H.E. Maes, J. Appl. Pliys., 74(1) (1993) 4490-4500.