Intrinsic stress in porous silicon layers formed by anodization in HF solution

Journal of the Electrochemical Society

Volumn 144, Issue 5, 1997, Pages 1835-1838

  Unagami, T ^a  

^a TEIKYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; HYDROFLUORIC ACID; HYDROGEN BONDS; SILICON; STRESS ANALYSIS; STRESSES;

ANODIZATION; INTRINSIC STRESS;

POROUS SILICON;

EID: 0031147097     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837686     Document Type: Article

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