메뉴 건너뛰기




Volumn 87, Issue 5, 2000, Pages 2131-2136

X-ray diffraction investigation of the low temperature thermal expansion of porous silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0013088385     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372151     Document Type: Article
Times cited : (19)

References (37)
  • 2
    • 0000227182 scopus 로고    scopus 로고
    • Properties of porous silicon
    • edited by L. T. Canham INSPEC, The Institution of Electrical Engineers, London
    • Properties of Porous Silicon, EMIS Datareview No. 18, edited by L. T. Canham (INSPEC, The Institution of Electrical Engineers, London, 1997).
    • (1997) EMIS Datareview , vol.18
  • 5
    • 0005688480 scopus 로고
    • Semiconductors: Intrinsic properties of group iV elements and III-V, II-VI and I-VII compounds
    • edited by O. Madelung and M. Schultz Springer, Berlin
    • Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, Landolt-Börnstein New Series III/22a, edited by O. Madelung and M. Schultz (Springer, Berlin, 1987).
    • (1987) Landolt-börnstein New Series , vol.3
  • 9
    • 85037513895 scopus 로고    scopus 로고
    • Thesis, Grenoble University
    • C. Faivre, Thesis, Grenoble University, 1998.
    • (1998)
    • Faivre, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.