An approach for fabricating high-performance inductors on low-resistivity substrates

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 9, 1998, Pages 1433-1437

  Xie, Ya Hong ^a   Frei, Michel R ^a   Becker, Andrew J ^a   King, Clifford A ^a   Kossives, D ^a   Gomez, L T ^a   Theiss, S K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Inductors; Porous silicon; Very large scale integration

Indexed keywords

EID: 0343782309     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.711344     Document Type: Article

References (5)

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2. K. Imai, "A new dielectric isolation method using porous silicon," Solid State Electron., vol. 24, no. 2, pp. 159-164, Feb. 1981.
3. J. N. Burghartz, M. Soyuer, K. A. Jenkins, M. Kies, P. Dolan, K. Stein, J. Malinowski, and D. L. Harame, "RF components implemented in an analog SiGe bipolar technology," in Proc. BCTM, 1996, pp. 138-141.
4. Em User's Manual, Sonnet Software, Inc., 1996
5. J. Y. C. Chang, A. A. Abidi, and M. Gaitan, IEEE Electron Device Lett., vol. 14, pp. 246-248, 1993.