High Q inductors for wireless applications in a complementary silicon bipolar process

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 1, 1996, Pages 4-9

  Ashby, Kirk B ^a,d,e,o   Koullias, Ico A ^{a,b,f,g,h,i,j,o}   Finley, William C ^c,g,k   Bastek, John J ^a,l   Moinian, Shahriar ^a,m,n,o  

^a LUCENT TECHNOLOGIES   (United States)

^b Wireless Microsystems   (United States)

^c AT and T Microelectronics   (United States)

^d BRIGHAM YOUNG UNIVERSITY   (United States)

^e Digitran Systems   (United States)

^f UNIVERSITY OF FLORIDA   (United States)

^g LEHIGH UNIVERSITY   (United States)

^h TEXAS INSTRUMENTS   (United States)

ⁱ National Center for Health Statistics   (United States)

^j Wireless Microsystems Corporation   (United States)

^k PENNSYLVANIA STATE UNIVERSITY   (United States)

^l ALBRIGHT COLLEGE   (United States)

^m UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

ⁿ SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

^o IEEE

more..

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRIC FILTERS; ELECTRIC LOSSES; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MIXER CIRCUITS; SEMICONDUCTING SILICON; SKIN EFFECT; SUBSTRATES;

HIGH FREQUENCY EFFECTS; SERIES RESISTANCE; SILICON INTEGRATED CIRCUITS;

ELECTRIC INDUCTORS;

EID: 0029735248     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.485838     Document Type: Article

References (8)

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