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Volumn 80, Issue 13, 2002, Pages 2287-2289
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Effective method for stress reduction in thick porous silicon films
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANODIZATIONS;
DESORPTION OF HYDROGEN;
HF CONCENTRATION;
MASS SPECTROSCOPY;
ONCHIP INDUCTORS;
PORE WALL;
RADIO-FREQUENCY APPLICATIONS;
ROOM TEMPERATURE;
SI SURFACES;
STANDARD SAMPLES;
STRESS CONTROL;
STRESS EVOLUTION;
STRESS LEVELS;
STRESS REDUCTION;
THERMAL-ANNEALING;
THICK POROUS SILICON;
COMPRESSIVE STRESS;
CRYSTAL ATOMIC STRUCTURE;
DESORPTION;
HYDROGEN;
MASS SPECTROMETRY;
RADIO BROADCASTING;
RADIO TRANSMISSION;
POROUS SILICON;
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EID: 79956054177
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1465130 Document Type: Article |
Times cited : (25)
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References (16)
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