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Volumn 80, Issue 13, 2002, Pages 2287-2289

Effective method for stress reduction in thick porous silicon films

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZATIONS; DESORPTION OF HYDROGEN; HF CONCENTRATION; MASS SPECTROSCOPY; ONCHIP INDUCTORS; PORE WALL; RADIO-FREQUENCY APPLICATIONS; ROOM TEMPERATURE; SI SURFACES; STANDARD SAMPLES; STRESS CONTROL; STRESS EVOLUTION; STRESS LEVELS; STRESS REDUCTION; THERMAL-ANNEALING; THICK POROUS SILICON;

EID: 79956054177     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1465130     Document Type: Article
Times cited : (25)

References (16)
  • 3
    • 0141775174 scopus 로고
    • apl APPLAB 0003-6951
    • L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990). apl APPLAB 0003-6951
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 1046
    • Canham, L.T.1
  • 10
    • 0031147097 scopus 로고    scopus 로고
    • jes JESOAN 0013-4651
    • T. Unagami, J. Electrochem. Soc. 144, 1835 (1997). jes JESOAN 0013-4651
    • (1997) J. Electrochem. Soc. , vol.144 , pp. 1835
    • Unagami, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.