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Volumn 18, Issue 2, 2003, Pages 92-96

Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEPOSITION; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; STRESSES; SUBSTRATES; ZIRCONIA;

EID: 0037320398     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/305     Document Type: Article
Times cited : (21)

References (23)
  • 3
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    • Structure and stability of ultrathin zirconium oxide layers on Si(001)
    • Copel M, Gribelyuk M and Gusev E 2000 Structure and stability of ultrathin zirconium oxide layers on Si(001) Appl. Phys. Lett. 76 436-8
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 436-438
    • Copel, M.1    Gribelyuk, M.2    Gusev, E.3
  • 9
    • 84939383977 scopus 로고
    • 2 interface-electrical properties as determined by the metal-insulator silicon conductance technique
    • 2 interface-electrical properties as determined by the metal-insulator silicon conductance technique Bell Syst. Tech. J. 46 1055-133
    • (1967) Bell Syst. Tech. J. , vol.46 , pp. 1055-1133
    • Nicollian, E.H.1    Goetzberger, A.2
  • 10
    • 0026106461 scopus 로고
    • Characterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxides
    • Liu Z H, Lai P T and Cheng Y C 1991 Characterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxides IEEE Trans. Electron Devices 38 344-54
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 344-354
    • Liu, Z.H.1    Lai, P.T.2    Cheng, Y.C.3
  • 11
    • 21544458715 scopus 로고
    • Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
    • DiMaria D J, Cartier E and Arnold D 1993 Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon J. Appl. Phys. 73 3367-84
    • (1993) J. Appl. Phys. , vol.73 , pp. 3367-3384
    • DiMaria, D.J.1    Cartier, E.2    Arnold, D.3
  • 14
    • 79956000795 scopus 로고    scopus 로고
    • Tuning the electrical properties of zirconium oxide thin films
    • Cho B, Wang J, Sha L and Chang J P 2002 Tuning the electrical properties of zirconium oxide thin films Appl. Phys. Lett. 80 1052-4
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1052-1054
    • Cho, B.1    Wang, J.2    Sha, L.3    Chang, J.P.4
  • 15
    • 0035956172 scopus 로고    scopus 로고
    • Dielectric property and conduction mechanism of ultrathin zirconium oxide films
    • Chang J P and Lin Y S 2001 Dielectric property and conduction mechanism of ultrathin zirconium oxide films Appl. Phys. Lett. 79 3666-8
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 3666-3668
    • Chang, J.P.1    Lin, Y.S.2
  • 19
    • 0033697180 scopus 로고    scopus 로고
    • Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors
    • Ghani T, Mistry K, Packan P, Thompson S, Stettler M, Tyagi S and Bohr M 2000 Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors VLSI Symp. Tech. Dig. 174-5
    • (2000) VLSI Symp. Tech. Dig. , pp. 174-175
    • Ghani, T.1    Mistry, K.2    Packan, P.3    Thompson, S.4    Stettler, M.5    Tyagi, S.6    Bohr, M.7
  • 21
    • 0032614865 scopus 로고    scopus 로고
    • Effects of interracial layer growth on the electrical characteristics of thin titanium oxide films on silicon
    • Lee B H, Jeon Y, Zawadzki K, Qi W J and Lee J 1999 Effects of interracial layer growth on the electrical characteristics of thin titanium oxide films on silicon Appl. Phys. Lett. 74 3143-5
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 3143-3145
    • Lee, B.H.1    Jeon, Y.2    Zawadzki, K.3    Qi, W.J.4    Lee, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.