Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 329-334

  Tanaka, Satoru ^a   Iwai, Sohachi ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THIN FILMS;

CRYSTAL DEFECT DENSITY; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0030683841     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00611-2     Document Type: Article

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