Light-excitation-based spectroscopy of electronic defects in novel materials

Materials Research Society Symposium - Proceedings

Volumn 588, Issue , 2000, Pages 51-60

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; ENERGY GAP; PHOTOIONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRONIC DEFECT; GALLIUM NITRIDE; WIDE BAND GAP MATERIAL;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0033716496     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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