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Volumn 91, Issue 10 I, 2002, Pages 6754-6760

Thermal oxidation of Si (001) single crystal implanted with Ge ions

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL TECHNIQUES; GE CLUSTER; GE CONCENTRATIONS; GE DIFFUSION; GE FRACTION; OXIDATION MECHANISMS; OXIDATION PROCESS; OXIDATION RATES; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI(0 0 1); THERMAL OXIDATION;

EID: 0037095123     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471942     Document Type: Article
Times cited : (12)

References (26)
  • 1
    • 0003679027 scopus 로고
    • McGraw-Hill, New York
    • VLSI Technology, edited by S. M. Sze (McGraw-Hill, New York, 1985).
    • (1985) VLSI Technology
    • Sze, S.M.1
  • 8
    • 0033076887 scopus 로고    scopus 로고
    • amt ADVMEW 0935-9648
    • D. J. Paul, Adv. Mater. 11, 191 (1999). amt ADVMEW 0935-9648
    • (1999) Adv. Mater. , vol.11 , pp. 191
    • Paul, D.J.1
  • 15
    • 0000658076 scopus 로고    scopus 로고
    • jaJAPIAU 0021-8979
    • L. S. Riley and S. Hall, J. Appl. Phys. 85, 6828 (1999). jap JAPIAU 0021-8979
    • (1999) J. Appl. Phys. , vol.85 , pp. 6828
    • Riley, L.S.1    Hall, S.2
  • 17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.