Oxidation of silicon-germanium alloys. II. A mathematical model

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5779-5787

  Hellberg, P E ^a   Zhang, S L ^a   D'Heurle, F M ^a,b   Petersson, C S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000697975     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366444     Document Type: Article

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